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Gallium-doped zinc oxide enables 24.92%-efficient HJT solar cell

Researchers used room-temperature reactive plasma deposition to produce indium-free transparent electrodes for silicon heterojunction solar cells. Optimizing the oxygen content during deposition achieved a 24.92% conversion efficiency, with silver-coated copper contacts.

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PV Magazine

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Read the original ↗https://www.pv-magazine.com/2026/10/29/gallium-doped-zinc-oxide-enables-24-92-efficient-hjt-solar-cell/
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Gallium-doped zinc oxide enables 24.92%-efficient HJT solar cell

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